C30954EH - Si APD, 0.8mm, TO-5 Package
The C30954EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 0.8 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Features & Benefits:
- Active diameter 0.8mm
- High-quantum efficiency at 1060 nm
- Fast-response time
- Wide operating temperature range
- Low capacitance
- Hermetically-sealed packages
- RoHS compliant
- TEC option available
Applications:
- Range finding
- LiDAR
- YAG laser detection
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
Breakdown Voltage: >300, 375, <475 V
Capacitance: 2pF
Dark Current: 50nA
Gain: 120
Noise Current: 1 pA/√Hz
Package: TO-5
Peak Sensitivity Wavelength: 900 nm
Responsivity:
- 75 A/W at 900 nm,
- 36 A/W at 1050 nm,
- 5 A/W at 1150 nm
Rise/Fall Time: 2ns
Temperature Coefficient: 2.4 V/°C
Vop Range: 275-450 V
Wavelength: 400-1100 nm
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
Breakdown Voltage: >300, 375, <475 V
Capacitance: 2pF
Dark Current: 50nA
Gain: 120
Noise Current: 1 pA/√Hz
Package: TO-5
Peak Sensitivity Wavelength: 900 nm
Responsivity:
- 75 A/W at 900 nm,
- 36 A/W at 1050 nm,
- 5 A/W at 1150 nm
Rise/Fall Time: 2ns
Temperature Coefficient: 2.4 V/°C
Vop Range: 275-450 V
Wavelength: 400-1100 nm