C30645ECERH - InGaAS APD, 80um, Ceramic
The C30645ECERH Large-Area InGaAs Avalanche Photodiode (APD) provides an 80 µm active diameter in ceramic submount carrier.
The Excelitas C30645ECERH is optimized for the wavelength of 1550 nm and is suitable for use in eye-safe laser range finding systems.
Features & Benefits:
- Large area InGaAs APD 80 µm diameter
- Ceramic Submount Carrier
- Spectral response 1000 to 1700 nm
- Low noise and dark current
- High gain and quantum efficiency
- Bandwidth over 1000 MHz
- Custom modifications available to meet specific needs
Applications:
- Laser range finding, scanning and video imaging
- Optical and free space communication
- Scanning and video imaging
- Optical and free space communication spectrophotometers and reflectometry
Active Diameter: 80 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: 2x4mm ceramic submount carrier
Active Diameter: 80 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: 2x4mm ceramic submount carrier