Excelitas  InGaAs APD C30662 in Ceramic Carrier
PART/ C30662ECERH-1

C30662ECERH-1 - InGaAs APD, 200um, Ceramic

The C30662ECERH-1 Large-area InGaAs Avalanche Photodiode (APD) provides a 200 µm active diameter in ceramic submount carrier with a Delta Vbd-Vop > 4V.

The Excelitas C30662ECERH-1 APD is optimized for wavelength of 1550 nm and suitable for use in eye-safe laser range finding systems.

Features & Benefits:

  • Large-area InGaAs APD 200 µm diameter
  • Ceramic submount carrier
  • Spectral response 1000 to 1700 nm
  • Low noise and dark current
  • High gain and quantum efficiency
  • Selected for Delta-V > 4v
  • Bandwidth over 850 MHz
  • Custom modifications available to meet specific needs

Applications:

  • Laser-range finding, scanning and video imaging
  • Optical and free space communication
  • Scanning and video imaging
  • Optical and free space communication spectrophotometers and reflectometry

Active Diameter: 200 µm
Breakdown Voltage: 40-70 V
Vbd-Vop: >4V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 45 nA
Spectral Noise Current: 0.7 pA/√Hz
Capacitance: 2.5 pF
Bandwidth: 850 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: 2x4mm ceramic submount carrier

Active Diameter: 200 µm
Breakdown Voltage: 40-70 V
Vbd-Vop: >4V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 45 nA
Spectral Noise Current: 0.7 pA/√Hz
Capacitance: 2.5 pF
Bandwidth: 850 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: 2x4mm ceramic submount carrier

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