C30662ECERH - InGaAs APD, 200um, Ceramic
The C30662ECERH Large-area InGaAs Avalanche Photodiode (APD) provides a 200 µm active diameter in a ceramic submount carrier.
The C30662ECERH is optimized for use with the wavelength of 1550 nm and suitable for use in eye-safe laser-range finding systems.
Features & Benefits:
- Large-area InGaAs APD 200 µm diameter
- Ceramic submount carrier
- Spectral response 1000 to 1700 nm
- Low noise and dark current
- High gain and quantum efficiency
- Bandwidth over 850 MHz
- Custom modifications available to meet specific needs
Applications:
- Laser-range finding, scanning and video imaging
- Optical and free space communication
- Scanning and video imaging
- Optical and free space communication spectrophotometers and reflectometry
Active Diameter: 200 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 45 nA
Spectral Noise Current: 0.7 pA/√Hz
Capacitance: 2.5 pF
Bandwidth: 850 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: 2x4mm ceramic submount carrier
Active Diameter: 200 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 45 nA
Spectral Noise Current: 0.7 pA/√Hz
Capacitance: 2.5 pF
Bandwidth: 850 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: 2x4mm ceramic submount carrier