Excelitas Industry Standard Photodiodes 
PART/ VTD34H

VTD34H - Si PD, BPW34 equivalent, Mini-dip, 7.45mm2

The VTD34H is a silicon photodiode in a transparent plastic molded package, and a BPW34 industry equivalent. This photodiode provides high sensitivity, fast response, and a wide field-of-view.

This silicon photodiode provides a 7.45 mm2 active area designed for a spectral response between 400 nm and 1100 nm. Suitable for direct mounting to a printed circuit board (PCB), arrays can be formed by positioning these devices side-by-side. These photodiodes are designed to provide excellent sensitivity at low light level. 

Our VTD Series of Photodiodes are commonly used in various applications as replacements for competitive devices.

Features & Benefits:

  • Visible to IR spectral range
  • Peak wavelength: 900 nm
  • Medium size active area
  • Low dark current
  • Fast response
  • RoHs compliant

Applications:

  • Pulse Oximetry
  • Coin counters
  • Automotive

Active area = 7.45 mm2 active area

Short Circuit Current = Minimum 50 µA at 1000 Lux; 2,850 K

Dark Current = Maximum 30 nA at 10 V Reverse Bias

Junction Capacitance = Maximum 60 pF at 0 V Bias

Rise/Fall time = Typical 50 ns, with 1 kΩ load, 10 V Reverse bias, 833 nm

Spectral Range = 400 nm to 1100 nm

Peak Spectral Response = 900 nm

Sensitivity at peak Wavelength = Typical 0.60 A/W

Angular Response = ±50 Degrees at 50 % Response

Active area = 7.45 mm2 active area

Short Circuit Current = Minimum 50 µA at 1000 Lux; 2,850 K

Dark Current = Maximum 30 nA at 10 V Reverse Bias

Junction Capacitance = Maximum 60 pF at 0 V Bias

Rise/Fall time = Typical 50 ns, with 1 kΩ load, 10 V Reverse bias, 833 nm

Spectral Range = 400 nm to 1100 nm

Peak Spectral Response = 900 nm

Sensitivity at peak Wavelength = Typical 0.60 A/W

Angular Response = ±50 Degrees at 50 % Response

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