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PART/ VTP8551H

VTP8551H - Si PD, Mini-dip, 7.45 mm2

The VTP8551H is a silicon photodiode in a tansparent plastic molded package. With a wide field of view, this photodiode produces a fast response and low dark current.

This fast-response silicon photodiode iprovides a 7.45 mm2 active area and a spectral response between 400 and 1150nm. Suitable for direct mounting on PCB, arrays can be formed by positioning these devices side by side.

Our series of fast-response photodiodes are designed for low-junction capacitance to achieve faster response time. They are suitable for operation under reverse bias, which increases the speed of response, but can also be used in photovoltaic mode. These photodiodes have excellent response in the IR region and are well matched to IR LEDs.

Features & Benefits:

  • Visible to IR spectral range
  • Peak wavelength: 925nm
  • Medium size active area
  • 1 to 2% linearity over 7 to 9 decades
  • Low dark current
  • High shunt resistance
  • Low capacitance
  • Fast response
  • RoHs compliant

Applications:

  • Smoke detection
  • Barcode scanning
  • Light meters
  • Pulse oximeters

Active area = 7.45 mm2 active area

Short Circuit Current = Minimum 50 µA at 100 fc, 2850 K

Responsivity = Typical 0.05/(W/cm2), 940 nm

Dark Current = Maximum 30 nA at 10 V Reverse Bias

Junction Capacitance = Maximum 50 pF at 3 V Reverse Bias

Spectral Range = 400 nm to 1150 nm

Peak Spectral Response = 925 nm

Sensitivity at peak Wavelength = Typical 0.55 A/W

Angular Response = ±50 Degrees at 50 % Response

Active area = 7.45 mm2 active area

Short Circuit Current = Minimum 50 µA at 100 fc, 2850 K

Responsivity = Typical 0.05/(W/cm2), 940 nm

Dark Current = Maximum 30 nA at 10 V Reverse Bias

Junction Capacitance = Maximum 50 pF at 3 V Reverse Bias

Spectral Range = 400 nm to 1150 nm

Peak Spectral Response = 925 nm

Sensitivity at peak Wavelength = Typical 0.55 A/W

Angular Response = ±50 Degrees at 50 % Response

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