APD四象限探测器
埃赛力达C30927系列雪崩光电二极管（APD）阵列和象限探测器采用双扩散“穿透式”结构，从根本上消除了象限之间的盲区，以获得最佳性能。这种结构在400 nm到1000 nm范围内提供超高灵敏度。根据探测器不同的峰值工作波长（包括800、900和1060 nm），提供三种不同的产品型号。
C30927EH-01 - Si APD四象限探测器 - 1.5 mm - 1060 nm
C30927EH-01四象限硅雪崩光电二极管的有效直径为1.55 mm，其设计采用双扩散“直通”结构。
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C30927EH-02硅APD四象限探测器 - 1.5mm - 900 nm
The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite...
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C30927EH-03 - 硅APD四象限探测器 - 1.5mm - 800 nm
The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite...
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