Excelitas C30659-900-R5BH Silicon APD Receiver
PART/ C30659-900-R5BH

C30659-900-R5BH - Si APD Receiver, 0.5mm, TO-8, 200MHz

The C30659 Series includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-900-R5BH device has a C30902EH Si APD with a peak response at 900 nm and 0.5 mm active diameter.

The Excelitas C30659 Series features an inverting amplifier design with an emitter follower used as an output buffer stage.

The Si APDs used in these devices are the same as used in the Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low-noise GaAs FET front end designed to operate at higher transimpedance than our standard C30950 Series.

  • System bandwidth: 200 MHz
  • Ultra-low noise equivalent power (NEP):
    • 35 fW/√Hz at 830 nm
    • 40 fW/√Hz at 900 nm
  • Spectral response range: 400 to 1100 nm
  • Typical power consumption: 150 mW
  • ±5 V amplifier operating voltages
  • 50 Ω AC load capability (AC-Coupled)
  • Hermetically-sealed TO-8 package
  • High reliability
  • System bandwidth: 200 MHz
  • Ultra-low noise equivalent power (NEP):
    • 35 fW/√Hz at 830 nm
    • 40 fW/√Hz at 900 nm
  • Spectral response range: 400 to 1100 nm
  • Typical power consumption: 150 mW
  • ±5 V amplifier operating voltages
  • 50 Ω AC load capability (AC-Coupled)
  • Hermetically-sealed TO-8 package
  • High reliability
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