Excelitas offers Avalanche Photodiodes (APDs) on both Silicon (Si) and InGaAs materials. Si APDs cover the spectral range of 400 nm to 1100 nm and the InGaAs APDs cover 950 nm to 1550 nm. An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode and is for extreme low-level light (LLL) detection and photon counting.
The use of APDs instead of PIN photodetectors will result in improved sensitivity in many applications. In general, APDs are useful in applications where the noise of the amplifier is high, for example, much higher than the noise in the PIN photodetector.
High-Performance Si APDs
The high performance rear entry “reach-through” silicon APDs offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm. These Si APDs feature low noise, high quantum efficiency and high gain while...Read More
Large area, UV-Enhanced APDs
The large-area, UV-enhanced Silicon Avalanche Photodiodes (Si APDs) are intended for use in a wide variety of broadband low-light-level applications covering the spectral range from below 400 to over 700 nm. These low noise, low capacitance and high gain Si APDs are available in flat-pack packages...Read More
Hybrid Optical APD Receiver Modules
The Excelitas Hybrid Optical APD Receiver Modules are comprised of a photodetector (PIN or APD) and a transimpedance amplifier in the same hermetically sealed package. Having both an amplifier and photodetector in the same package allows low-noise pickup from the surrounding environment and reduces...Read More
High-Volume, Cost-Effective Si APDs
Our C30724 Series of APDs provide high responsivity in the wavelength range of 800 to 950 nm and are designed to meet the needs of high-volume and low-cost applications. The C30724EH is in a hermetically-sealed TO-18 can. The C30724EH-2 is a modified TO-18 with a built in 905 nm narrow band pass...Read More
The Excelitas C30927 family of Avalanche Photodiode (APD) Arrays and Quadrants utilize a double-diffused "reach-through" structure essentially eliminating dead space between pixels for optimal performance. This structure provides ultra-high sensitivity at 400-1000 nm. Three different variants are...Read More
High-Performance InGaAs APDs
The High-Performance InGaAs Avalanche Photodiodes (APDs) C30644, C30645 and C30662 Series are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high-quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized...Read More
1064nm Long-Wavelength Enhanced Si APDs
The 1064nm Long-Wavelength Enhanced Si APDs (C30954EH, C30955EH, and C30956EH) are made using a double-diffused “reach-through” structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties....Read More