1064nm Long-Wavelength Enhanced Si APDs

The 1064nm Long-Wavelength Enhanced Si APDs (C30954EH, C30955EH, and C30956EH) are made using a double-diffused “reach-through” structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40 % at 1060 nm.

Excelitas 1064 nm  Long-Wavelength Si APDs

Product List

C30954EH - Si APD, 0.8mm, TO-5 Package
Part Number
C30954EH

C30954EH - Si APD, 0.8mm, TO-5 Package

The C30954EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 0.8 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Excelitas C30955EH Silicon APD
Part Number
C30955EH

C30955EH - Si APD, 1.5mm, TO-5 Package

The C30955EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (APD) provides a 1.5 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Excelitas Si APD C30956EH 
Part Number
C30956EH

C30956EH - Si APD, 3mm, TO-8 Package

The C30956EH Large-area, Long Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 3 mm active area diameter with high quantum efficiency at 1060 nm. Designed in a TO-8 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.