1064nm Long-Wavelength Enhanced Si APDs

The 1064nm Long-Wavelength Enhanced Si APDs (C30954EH, C30955EH, and C30956EH) are made using a double-diffused “reach-through” structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40 % at 1060 nm.

Excelitas 1064 nm  Long-Wavelength Si APDs

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