Excelitas C30955EH Silicon APD
PART/ C30955EH

C30955EH - Si APD, 1.5mm, TO-5 Package

The C30955EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (APD) provides a 1.5 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.

Features & Benefits:

  • Active diameter 1.5 mm
  • High quantum efficiency at 1060 nm
  • Fast response time
  • Wide operating temperature range
  • Low capacitance
  • Hermetically sealed packages
  • RoHS compliant
  • TEC option available

Applications:

  • Range finding
  • LiDAR
  • YAG laser detection

 

Active Area: 1.77 mm²
Active Diameter: 1.5 mm
Breakdown Voltage: >315, 390, <490 V
Capacitance: 3pF
Dark Current: 100nA
Gain: 100
Noise Current: 1 pA/√Hz
Package: TO-5
Peak Sensitivity Wavelength: 900 nm
Responsivity:

  • 70 A/W at 900 nm,
  • 34 A/W at 1050 nm,
  • 5 A/W at 1150 nm

Rise/Fall Time: 2ns
Temperature Coefficient: 2.4 V/°C
Vop Range: 275-450 V
Wavelength: 400-1100 nm

Active Area: 1.77 mm²
Active Diameter: 1.5 mm
Breakdown Voltage: >315, 390, <490 V
Capacitance: 3pF
Dark Current: 100nA
Gain: 100
Noise Current: 1 pA/√Hz
Package: TO-5
Peak Sensitivity Wavelength: 900 nm
Responsivity:

  • 70 A/W at 900 nm,
  • 34 A/W at 1050 nm,
  • 5 A/W at 1150 nm

Rise/Fall Time: 2ns
Temperature Coefficient: 2.4 V/°C
Vop Range: 275-450 V
Wavelength: 400-1100 nm

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