Excelitas Si APD C30956EH 
PART/ C30956EH

C30956EH - Si APD, 3mm, TO-8 Package

The C30956EH Large-area, Long Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 3 mm active area diameter with high quantum efficiency at 1060 nm. Designed in a TO-8 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.

Features & Benefits:

  • Active diameter 3 mm
  • High-quantum efficiency at 1060 nm
  • Fast response time
  • Wide operating temperature range
  • Low capacitance
  • Hermetically sealed packages
  • RoHS compliant
  • TEC option available

Applications:

  • Range finding
  • LiDAR
  • YAG laser detection

 

Active Area: 7 mm²
Active Diameter: 3 mm
Breakdown Voltage: >325, 400, <500 V
Capacitance: 2.4 pF
Dark Current: 100 nA
Gain: 75
Noise Current: 1.1 pA/√Hz
Package: TO-8
Peak Sensitivity Wavelength: 900 nm
Responsivity:

  • 45 A/W at 900 nm
  • 25A/W at 1050 nm
  • 3.5A/W at 1150 nm

Rise/Fall Time: 2 ns
Temperature Coefficient: 2.4 V/°C
Vop Range: 275-450 V
Wavelength: 400-1100 nm

Active Area: 7 mm²
Active Diameter: 3 mm
Breakdown Voltage: >325, 400, <500 V
Capacitance: 2.4 pF
Dark Current: 100 nA
Gain: 75
Noise Current: 1.1 pA/√Hz
Package: TO-8
Peak Sensitivity Wavelength: 900 nm
Responsivity:

  • 45 A/W at 900 nm
  • 25A/W at 1050 nm
  • 3.5A/W at 1150 nm

Rise/Fall Time: 2 ns
Temperature Coefficient: 2.4 V/°C
Vop Range: 275-450 V
Wavelength: 400-1100 nm

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