PART/ C30956EH
C30956EH - Si APD, 3mm, TO-8 Package
The C30956EH Large-area, Long Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 3 mm active area diameter with high quantum efficiency at 1060 nm. Designed in a TO-8 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Features & Benefits:
- Active diameter 3 mm
- High-quantum efficiency at 1060 nm
- Fast response time
- Wide operating temperature range
- Low capacitance
- Hermetically sealed packages
- RoHS compliant
- TEC option available
Applications:
- Range finding
- LiDAR
- YAG laser detection
- 45 A/W at 900 nm
- 25A/W at 1050 nm
- 3.5A/W at 1150 nm
- 45 A/W at 900 nm
- 25A/W at 1050 nm
- 3.5A/W at 1150 nm