APD Quadrants

The Excelitas C30927 family of Avalanche Photodiode (APD) Arrays and Quadrants utilize a double-diffused “reach-through" structure essentially eliminating dead space between pixels for optimal performance. This structure provides ultra-high sensitivity at 400-1000 nm. Three different variants are offered, depending on peak operation wavelength of interesting, including 800, 900 and 1060nm.

Excelitas APD Quadrants C30927 Series

Product List

The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.
Part Number
C30927EH-01

C30927EH-01 - Si APD Quadrant - 1.5 mm - 1060 nm

The C30927EH-01 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure.
The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.
Part Number
C30927EH-02

C30927EH-02 Si APD Quadrant - 1.5mm - 900 nm

The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-02 is optimized for operating at 900 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.
Part Number
C30927EH-03

C30927EH-03 - Si APD Quadrant - 1.5mm - 800 nm

The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.