PART/ C30927EH-02
C30927EH-02 Si APD Quadrant - 1.5mm - 900 nm
The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-02 is optimized for operating at 900 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
Key Features:
- Full Angle for Totally illuminated Photosensitive Surface greater than 90º
- High Quantum Efficiency optimized for 900 nm operation
- Fast Time Response
- Large Active Area: 1.77 mm²
- Hermetically Sealed Low Profile TO-8 Packages
Applications:
- Tracking
- Alignment
- "Friend or Foe" identification
| Breakdown voltage range (V) | 350 to 485 |
| Typical breakdown voltage (V) | 425 |
| Typical gain (M) | 100 |
| Typical Temperature Coefficient for constant gain (V/℃) | 2.4 |
| Minimal Responsivity at 900 nm (A/W) | 50 |
| Typical Responsivity at 900 nm (A/W) | 62 |
| Typical total dark current (nA) | 100 |
| Maximal total dark current (nA) | 200 |
| Typical noise current per element (pA/√Hz) | 1.0 |
| Maximal noise current per element (pA/√Hz) | 1.5 |
| Typical capacitance total of all quadrants (pF) | 3 |
| Maximal capacitance total of all quadrants (pF) | 5 |
| Maximal series resistance (Ω) | 15 |
| Typical rise and fall time (ns) | 3 |
| Storage temperature (℃) | -60 to 120 |
| Operating temperature (℃) | -40 to 60 |
| Breakdown voltage range (V) | 350 to 485 |
| Typical breakdown voltage (V) | 425 |
| Typical gain (M) | 100 |
| Typical Temperature Coefficient for constant gain (V/℃) | 2.4 |
| Minimal Responsivity at 900 nm (A/W) | 50 |
| Typical Responsivity at 900 nm (A/W) | 62 |
| Typical total dark current (nA) | 100 |
| Maximal total dark current (nA) | 200 |
| Typical noise current per element (pA/√Hz) | 1.0 |
| Maximal noise current per element (pA/√Hz) | 1.5 |
| Typical capacitance total of all quadrants (pF) | 3 |
| Maximal capacitance total of all quadrants (pF) | 5 |
| Maximal series resistance (Ω) | 15 |
| Typical rise and fall time (ns) | 3 |
| Storage temperature (℃) | -60 to 120 |
| Operating temperature (℃) | -40 to 60 |