Quadrant Detectors

Precise beam positioning can be achieved by using our quadrant PIN and avalanche photodetectors. They are designed with 4 pie-shaped quadrant sections from doping process, thus reducing to almost zero the “dead” space between each quadrant. Their structure allows high quantum efficiency and fast response for detection of photons in the 400 to 1100 nm range.

The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.

Product List

The C30845EH quadrant N-type PIN photodiode is designed for use in a wide variety of broad band low light level applications.
Part Number
C30845EH

C30845EH - Si PIN - 8mm- TO-8, Quadrant

The C30845EH is a high quality N-type Silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, designed for the 300 to 1100 nm wavelength range. Because of the large area (50 mm²), the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.
The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.
Part Number
C30927EH-02

C30927EH-02 Si APD Quadrant - 1.5mm - 900 nm

The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-02 is optimized for operating at 900 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.
Part Number
C30927EH-03

C30927EH-03 - Si APD Quadrant - 1.5mm - 800 nm

The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.