PART/ C30845EH
C30845EH - Si PIN - 8mm- TO-8, Quadrant
The C30845EH is a high quality N-type Silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, designed for the 300 to 1100 nm wavelength range. Because of the large area (50 mm²), the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.
Features:
- Large Photosensitive Surface Area of 50 mm²
- Low operating Voltage (Vop) of 45 V
- Hermetically Sealed Packages
- Spectral Response Range – 400 to 1100 nm
- Very Low Quadrant-Quadrant Separation – 0.25 mm
| Active diameter (mm) | 8 |
| Active area (mm²) | 50 |
| Minimal Breakdown Voltage (V) | 100 |
| Typical capacitance per element (pF) | 8 |
| Maximal capacitance per element (pF) | 10 |
| Typical dark current per element at 10 V per element (nA) | 70 |
| Maximal dark current per element at 10 V per element (nA) | 200 |
| Typical dark current per element at 45 V per element (nA) | 200 |
| Maximal dark current per element at 45 V per element (nA) | 700 |
| Typical noise current per element at 900 nm (pA/√Hz) | 0.43 |
| Maximal noise current per element at 900 nm (pA/√Hz) | 1.80 |
| Typical noise current per element at 1060 nm (pA/√Hz) | 1.5 |
| Maximal noise current per element at 1060 nm (pA/√Hz) | 6.5 |
| Typical rise time (ns) | 6 |
| Typical fall time (ns) | 10 |
| Storage temperature (℃) | -60 to 100 |
| Operating temperature (℃) | -40 to 80 |
| Active diameter (mm) | 8 |
| Active area (mm²) | 50 |
| Minimal Breakdown Voltage (V) | 100 |
| Typical capacitance per element (pF) | 8 |
| Maximal capacitance per element (pF) | 10 |
| Typical dark current per element at 10 V per element (nA) | 70 |
| Maximal dark current per element at 10 V per element (nA) | 200 |
| Typical dark current per element at 45 V per element (nA) | 200 |
| Maximal dark current per element at 45 V per element (nA) | 700 |
| Typical noise current per element at 900 nm (pA/√Hz) | 0.43 |
| Maximal noise current per element at 900 nm (pA/√Hz) | 1.80 |
| Typical noise current per element at 1060 nm (pA/√Hz) | 1.5 |
| Maximal noise current per element at 1060 nm (pA/√Hz) | 6.5 |
| Typical rise time (ns) | 6 |
| Typical fall time (ns) | 10 |
| Storage temperature (℃) | -60 to 100 |
| Operating temperature (℃) | -40 to 80 |