The C30845EH quadrant N-type PIN photodiode is designed for use in a wide variety of broad band low light level applications.
Typical spectral responsivity at room temperature of the C30845EH.
PART/ C30845EH

C30845EH - Si PIN - 8mm- TO-8, Quadrant

The C30845EH is a high quality N-type Silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, designed for the 300 to 1100 nm wavelength range. Because of the large area (50 mm²), the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.

Features:

  • Large Photosensitive Surface Area of 50 mm²
  • Low operating Voltage (Vop) of 45 V
  • Hermetically Sealed Packages
  • Spectral Response Range – 400 to 1100 nm
  • Very Low Quadrant-Quadrant Separation – 0.25 mm
Typical spectral responsivity at room temperature of the C30845EH.

Active diameter (mm): 8
Active area (mm²): 50
Minimal Breakdown Voltage (V): 100
Typical capacitance per element (pF): 8
Maximal capacitance per element (pF): 10
Typical dark current per element at 10 V per element (nA): 70
Maximal dark current per element at 10 V per element (nA): 200
Typical dark current per element at 45 V per element (nA): 200
Maximal dark current per element at 45 V per element (nA): 700
Typical noise current per element at 900 nm (pA/√Hz): 0.43
Maximal noise current per element at 900 nm (pA/√Hz): 1.80
Typical noise current per element at 1060 nm (pA/√Hz): 1.5
Maximal noise current per element at 1060 nm (pA/√Hz): 6.5
Typical rise time (ns): 6
Typical fall time (ns): 10
Storage temperature (℃): -60 to 100
Operating temperature (℃): -40 to 80

Active diameter (mm): 8
Active area (mm²): 50
Minimal Breakdown Voltage (V): 100
Typical capacitance per element (pF): 8
Maximal capacitance per element (pF): 10
Typical dark current per element at 10 V per element (nA): 70
Maximal dark current per element at 10 V per element (nA): 200
Typical dark current per element at 45 V per element (nA): 200
Maximal dark current per element at 45 V per element (nA): 700
Typical noise current per element at 900 nm (pA/√Hz): 0.43
Maximal noise current per element at 900 nm (pA/√Hz): 1.80
Typical noise current per element at 1060 nm (pA/√Hz): 1.5
Maximal noise current per element at 1060 nm (pA/√Hz): 6.5
Typical rise time (ns): 6
Typical fall time (ns): 10
Storage temperature (℃): -60 to 100
Operating temperature (℃): -40 to 80