The C30927 series are quadrant silicon avalanche photodiodes, useful in a variety of tracking and alignment applications.
PART/ C30927EH-03

C30927EH-03 - Si APD Quadrant - 1.5mm - 800 nm

The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.

The quadrant avalanche photodiodes are useful in a variety of tracking and alignment applications.

Key Features:

  • Full Angle for Totally illuminated Photosensitive Surface greater than 90º
  • High Quantum Efficiency optimized for 800 nm operation
  • Fast Time Response
  • Large Active Area: 1.77 mm²
  • Hermetically Sealed Low Profile TO-8 Packages

Applications:

  • Tracking
  • Alignment
  • "Friend or Foe" identification

 

Breakdown voltage range (V): 350 to 485

Typical breakdown voltage (V): 425

Typical gain (M): 100

Typical Temperature Coefficient for constant gain (V/℃): 2.4

Minimal Responsivity at 800 nm (A/W): 45

Typical Responsivity at 800 nm (A/W): 55

Typical total dark current (nA): 100

Maximal total dark current (nA): 200

Typical noise current per element (pA/√Hz): 1.0

Maximal noise current per element (pA/√Hz): 1.5

Typical capacitance total of all quadrants (pF): 3

Maximal capacitance total of all quadrants (pF): 5

Maximal series resistance (Ω): 15

Typical rise and fall time (ns): 3

Storage temperature (℃): -60 to 120

Operating temperature (℃): -40 to 60

Breakdown voltage range (V): 350 to 485

Typical breakdown voltage (V): 425

Typical gain (M): 100

Typical Temperature Coefficient for constant gain (V/℃): 2.4

Minimal Responsivity at 800 nm (A/W): 45

Typical Responsivity at 800 nm (A/W): 55

Typical total dark current (nA): 100

Maximal total dark current (nA): 200

Typical noise current per element (pA/√Hz): 1.0

Maximal noise current per element (pA/√Hz): 1.5

Typical capacitance total of all quadrants (pF): 3

Maximal capacitance total of all quadrants (pF): 5

Maximal series resistance (Ω): 15

Typical rise and fall time (ns): 3

Storage temperature (℃): -60 to 120

Operating temperature (℃): -40 to 60

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