Excelitas C30902EH Si APD
PART/ C30902EH

C30902EH - Si APD, 0.5mm, TO-18

Excelitas’ C30902EH Avalanche Photodiodes are high speed, large area silicon reach-through APDs that provide high responsivity at low noise. They are especially designed for low light applications that require typical gains larger than 100 and are offered within several TO-18 package configurations as flat glass, ball lens, light pipe and 905 nm filter.  

Low Noise Reach-Through APD for low light level detection

The C30902EH series of avalanche photodiodes is fabricated with a double-diffused “reach-through” structure. This structure provides high responsivity between 400 nm and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of the modulation frequency up to typically 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO-18 package. The useful diameter of the photosensitive surface is 0.5 mm.

The family of the C30902 APD series features also a Single Photon capable APD (SPAD) that can be operated in Geiger Mode and linear mode at substantial higher gains. Please refer to our C30902SH Datasheet for further information.

Features & Benefits:

  • 0.5 mm Si APD in TO-18 housing
  • High-quantum efficiency – 84% typical at 800 nm
  • Low noise at room temperature
  • High responsivity – internal avalanche gains >150
  • Spectral response range – 400 to 1100 nm
  • Time response – typically 0.4 ns
  • Wide operating temperature range -40°C to +85°C

Applications:

  • LiDAR / ToF Measurements
  • Optical Time-domain Reflectometer (OTDR)
  • Small-signal fluorescence
  • Laser Scanning

Active Area: 0.2 mm²
Active Diameter: 0.5 mm
Breakdown Voltage: Typ. 225 V
Capacitance: 1.5 pF
Temperature Coefficient: Typ. 0.7 V/°C
Dark Current: 7 nA
Dark Noise: 0.1 pA/√Hz
Noise Equivalent Power: 1.23 fW/√Hz
Typical Responsivity: 80 A/W at 800nm
Recommended Gain: 150
Package: TO-18, flat window

Active Area: 0.2 mm²
Active Diameter: 0.5 mm
Breakdown Voltage: Typ. 225 V
Capacitance: 1.5 pF
Temperature Coefficient: Typ. 0.7 V/°C
Dark Current: 7 nA
Dark Noise: 0.1 pA/√Hz
Noise Equivalent Power: 1.23 fW/√Hz
Typical Responsivity: 80 A/W at 800nm
Recommended Gain: 150
Package: TO-18, flat window

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