LLAM-1060E-R8BH - Si APD Receiver, 0.8mm, TO-66, 200MHz, Cooler, High-Damage Threshold
The LLAM-1060E-R8BH High-speed, low-light analog avalanche photodiode (APD) receiver module with a 1060 nm Silicon (Si) APD. Featuring a thermoelectric cooler, this Si APD provides a 0.8 mm active diameter and a bandwidth of 200 MHz.
The LLAM Series of APD Modules features an avalanche photodiode chip, thermoelectric (TE) cooler, and preamplifier, all in a hermetically-sealed package. The fully RoHS-compliant module is supplied in a single modified 12-lead TO-66 flange package, is easy to install, and offers additional heat sinking. The use of a TE-cooler ensures lower noise and constant responsivity over a 5°C to 40°C ambient temperature range. The LLAM Series Modules are designed for the detection of high-speed, low-light analog signals.
Excelitas’ InGaAs LLAM-1060E and -1550E Preamplifier Modules, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities.
LLAM-1060-R8BH includes the Excelitas C30954EH APD.
Applications:
- Laser-range finding
- Target recognition
- Distributed temperature sensing (DTS)
- Confocal microscopy
- Analytical instrumentation
- High speed, free space optical communication
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Active Area: 0.5 mm²
Active Diameter: 0.8 mm
Bandwidth: 200 MHz
NEP:
- 30-90 fW/√Hz at 830 nm
- 25-80 fW/√Hz at 900 nm
- 50-150 fW/√Hz at 1064 nm
Peak Sensitivity Wavelength: 1064 nm
Responsivity:
- 325 kV/W at 830 nm
- 370 kV/W at 900 nm
- 200 kV/W at 1064 nm
Rise/Fall Time: 2 ns
Temperature Coefficient: 2.2 V/°C
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
Bandwidth: 200 MHz
NEP:
- 30-90 fW/√Hz at 830 nm
- 25-80 fW/√Hz at 900 nm
- 50-150 fW/√Hz at 1064 nm
Peak Sensitivity Wavelength: 1064 nm
Responsivity:
- 325 kV/W at 830 nm
- 370 kV/W at 900 nm
- 200 kV/W at 1064 nm
Rise/Fall Time: 2 ns
Temperature Coefficient: 2.2 V/°C