Mod_PM-C-BB

Phase Modulators PM-C-BB

The LINOS® PM-C-BB Phase Modulator features a Brewster-cut MgO-LiNbO3 crystal, offering exceptional performance across a broad wavelength range from visible (VIS) to mid-infrared. Designed for demanding applications, such as side band generation e.g , used in Pound-Drever-Hall stabilization of optical resonators, it boasts a high photorefractive damage threshold, very high transmission, and minimal residual amplitude modulation.

The PM-C-BB uses a Brewster-cut MgO-doped LiNbO3 crystal covering 450–3000 nm (excluding 2.82–2.84 µm absorption). It has a high photorefractive damage threshold (>100 W/mm² at 1064 nm CW) and low residual amplitude modulation. The PM-C-BB (T) model includes active temperature stabilization within 10 mK for improved stability.

Product PM-C-BB (T) Adapter plate for 1" mirror mount PM-C-BB
Design Wavelength 450.0 - 3000.0 nm 450.0 - 3000.0 nm
Clear aperture 1.5 mm 1.5 mm
Aperture Diameter 1.9 mm 1.9 mm
Power capability (W) > 100.0 W > 100.0 W
Switching Voltage 150 150
Part Number 845120900007 845120900008 845120900006
  • 1xSMA Connector provides a reliable, high-frequency signal interface with excellent shielding and low signal loss, ensuring stable and precise modulation performance.
  • Capacitance 10 pF, allowing rapid voltage changes.
  • Wavefront distortion <λ/4 at 633nm, minimizes phase errors and beam distortion.
  • Bandwidth : DC-500 MHz (>10 MHz resonance free) enabling precise, high-speed signal modulation without distortion or interference from resonances.
Product PM-C-BB (T) Adapter plate for 1" mirror mount PM-C-BB
Design Wavelength 450.0 - 3000.0 nm 450.0 - 3000.0 nm
Clear aperture 1.5 mm 1.5 mm
Aperture Diameter 1.9 mm 1.9 mm
Power capability (W) > 100.0 W > 100.0 W
Switching Voltage 150 150
Part Number 845120900007 845120900008 845120900006
  • 1xSMA Connector provides a reliable, high-frequency signal interface with excellent shielding and low signal loss, ensuring stable and precise modulation performance.
  • Capacitance 10 pF, allowing rapid voltage changes.
  • Wavefront distortion <λ/4 at 633nm, minimizes phase errors and beam distortion.
  • Bandwidth : DC-500 MHz (>10 MHz resonance free) enabling precise, high-speed signal modulation without distortion or interference from resonances.
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