VTB4051H - Si PD, Ceramic, 14.8mm2
The VTB4051H is a blue-enhanced silicon photodiode in a 8 mm recessed ceramic package protected with a clear epoxy layer. This photodiode provides an enhanced response in the blue spectral range, as well as exhibits a very high shunt resistance and a low dark current.
The VTB4051H blue-enhanced silicon photodiode provides a 14.8 mm2 active area and is designed for spectral response between 320 and 1100 nm.
This series of P on N Silicon planar photodiodes has been designed for optimum response through the visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They are designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
Applications:
- UV and blue light sensing
- Light meters
- Flame monitoring
- Photometry
Active area = 14.8 mm2
Short Circuit Current = Minimum 100 µA at 100 fc, 2850 K
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3.0 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±60 Degrees at 50% Response
Active area = 14.8 mm2
Short Circuit Current = Minimum 100 µA at 100 fc, 2850 K
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3.0 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±60 Degrees at 50% Response