VTB5051UVJH - Si PD, TO-5, 14.8mm2, Isolated Case, UV Window
The VTB5051UVJH is a silicon photodiode in a hermetic TO-5 UV enhanced flat window package where the photodiode chip is isolated from the case. This photodiode provides an enhanced response in the UV spectral range, as well as exhibits a very high shunt resistance and a low dark current.
This UV-enhanced silicon photodiode provides a 14.8 mm2 active area and is designed for optimum spectral response between 200 nm and 1100 nm.
This series of P on N Silicon planar photodiodes has been designed for optimum response through the UV and visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They have also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
Applications:
- UV and Blue light sensing
- Light meters
- Flame monitoring
- Photometry
Active area = 14.8 mm2
Short Circuit Current = Minimum 85 µA at 100 fc, 2850 K
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
Spectral Range = 200 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Sensitivity at 365 nm = Typical 0.1 A/W
Sensitivity at 220 nm = Minimum 0.038 A/W
Angular Response = ±50 Degrees at 50% Response
Active area = 14.8 mm2
Short Circuit Current = Minimum 85 µA at 100 fc, 2850 K
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
Spectral Range = 200 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Sensitivity at 365 nm = Typical 0.1 A/W
Sensitivity at 220 nm = Minimum 0.038 A/W
Angular Response = ±50 Degrees at 50% Response