PART/ VTB6061BH
VTB6061BH - Si PD, TO-8, 37.7mm2, IR Filter
The VTB6061BH is a silicon photodiode in a hermetic TO-8 flat window package. With a built-in IR rejection filter to limit the response into the visible portion of the spectrum, this photodiode exhibits a very high shunt resistance and a low dark current.
The VTB6061BH Silicon Photodiode provides a 37.7 mm2 active area and is primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. This photodiode is designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- Visible spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
Applications:
- Ambient light sensing
- Light meters
- Flame monitoring
- Photometry
- Active area = 37.7 mm2
- Short Circuit Current = Minimum 26 µA at 100 fc, 2850 K
- Dark Current = Maximum 2 nA at 2 V Reverse Bias
- Junction Capacitance = Typical 8 nF at 0 V Bias
- Spectral Range = 330 nm to 720 nm
- Peak Spectral Response = 580 nm
- Sensitivity at peak Wavelength = Typical 0.29 A/W
- Angular Response = ±55 Degrees at 50% Response
- Active area = 37.7 mm2
- Short Circuit Current = Minimum 26 µA at 100 fc, 2850 K
- Dark Current = Maximum 2 nA at 2 V Reverse Bias
- Junction Capacitance = Typical 8 nF at 0 V Bias
- Spectral Range = 330 nm to 720 nm
- Peak Spectral Response = 580 nm
- Sensitivity at peak Wavelength = Typical 0.29 A/W
- Angular Response = ±55 Degrees at 50% Response