PART/ C30737LH-230-90N
C30737LH-230-90N - Si APD, 230um, LCC, 900nm enhanced
The C30737LH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm with enhanced 900 nm response in a leadless ceramic carrier (LCC).
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise time at all wavelengths with a frequency response above 380 MHz
- Active diameter of 230μm and optimized for 900 nm peak sensitivity
- Leadless ceramic carrier option "LH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
- Active Diameter: 230μm
- Peak Sensitivity Wavelength: 900 nm
- Breakdown Voltage Vbd: 180-260 (binning available)
- Temperature Coefficient of Vop for Constant M: 1.3 V/°C
- Gain: 100 @ 900 nm
- Responsivity: 60 A/W at 900 nm
- Dark Current Id: 0.05 <0.5 nA
- Noise Current: 0.1 pA/√Hz
- Capacitance: 0.6 pF
- Rise/Fall Time: 0.9 ns R load = 50Ω
- Cut: off Frequency: 380 MHz
- Storage Temp: -50°C to +100°C
- Operating Temp: -40°C to +85°C
- Package: 3x3mm glass window, leadless ceramic carrier (LCC)
- Window: Standard
- Active Diameter: 230μm
- Peak Sensitivity Wavelength: 900 nm
- Breakdown Voltage Vbd: 180-260 (binning available)
- Temperature Coefficient of Vop for Constant M: 1.3 V/°C
- Gain: 100 @ 900 nm
- Responsivity: 60 A/W at 900 nm
- Dark Current Id: 0.05 <0.5 nA
- Noise Current: 0.1 pA/√Hz
- Capacitance: 0.6 pF
- Rise/Fall Time: 0.9 ns R load = 50Ω
- Cut: off Frequency: 380 MHz
- Storage Temp: -50°C to +100°C
- Operating Temp: -40°C to +85°C
- Package: 3x3mm glass window, leadless ceramic carrier (LCC)
- Window: Standard