Excelitas IR Emitting Diodes
PART/ VTE1013H

VTE1013H - IRED, TO-46 package, 30mW, Beam angle of ±35°

The VTE1013H is a 940 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package. This IRED provides 30 mW of output power and wide beam angle of ±35°.

This 940 nm IRED features a large area GaAs chip with double wirebond for high current CW- and pulsed operation and an operation temperature of -40 to 125 °C.

Applications:

  • Light barriers and curtains
  • Optical switch
  • IR illumination
  • Optical communication

  • Peak wavelength: 940 nm
  • Total peak power: 30 mW
  • Half power beam angle: ±35°
  • CW and pulsed operation
  • Operating temperature: 40 to 125 °C
  • Peak wavelength: 940 nm
  • Total peak power: 30 mW
  • Half power beam angle: ±35°
  • CW and pulsed operation
  • Operating temperature: 40 to 125 °C
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