940nm Infrared Emitting Diodes

The 940 nm Series of Infrared Emitting Diodes (IREDs) consists of two standard chips in three different packages. All devices use high efficiency GaAs liquid phase epitaxial chips mounted P side down for highest output at 940 nm. TO-46 devices are double bonded for increased reliability in pulse applications.

Infrared Emitting Diodes

Product List

Part Number
VTE1013H

VTE1013H - IRED, TO-46 package, 30mW, Beam angle of ±35°

The VTE1013H is a 940 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package. This IRED provides 30 mW of output power and wide beam angle of ±35°.
Part Number
VTE1113H

VTE1113H - IRED, TO-46 package with lens, 30mW, Beam angle of ±10°

The VTE1113H is a 940 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package with a lens. This IRED provides 30 mW of output power with a narrow beam angle of ±10°.
Part Number
VTE3322LAH

VTE3322LAH - IRED, T-1 (3mm) plastic package, 1.5mW, Beam angle of ±10°

The VTE3322LAH is a 940 nm Infrared Emitting Diode (IRED) in a T-1 (3 mm) plastic package. It provides 1.5 mW of output power and a narrow beam angle of ±10°.