Excelitas IR Emitting Diodes
PART/ VTE1113H

VTE1113H - IRED, TO-46 package with lens, 30mW, Beam angle of ±10°

The VTE1113H is a 940 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package with a lens. This IRED provides 30 mW of output power with a narrow beam angle of ±10°.

This 940 nm IRED features a large area GaAs chip with double wirebond for high current CW- and pulsed operation and an operation temperature of -40 to 125 °C.

Applications:

  • Light barriers and curtains
  • Optical switch
  • IR illumination
  • Optical communication

 

Peak wavelength: 940 nm

Total peak power: 30 mW

Half power beam angle: ±10°

CW and pulsed operation

Operating temperature -40 to 125 °C

Peak wavelength: 940 nm

Total peak power: 30 mW

Half power beam angle: ±10°

CW and pulsed operation

Operating temperature -40 to 125 °C

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