VTP1112H - Si PD, TO-46 Lensed, 1.6 mm2
The VTP1112H is a silicon photodiode with an enhanced response in the visible and near IR spectral range in a hermetic TO-46 lensed package. This photodiode exhibits a very high shunt resistance, low dark current, low capacitance and narrow field-of-view.
This fast-response silicon photodiode provides a 1.6 mm2 active area and is designed for spectral response between 400 nm and 1150 nm.
Our series of fast-response photodiodes are designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode if speed of response is not critical for the application in which they are being used.Â
These devices have excellent response in the IR spectral range and are well matched to the Excelitas Infrared LED VTE series.
Features & Benefits:
- Visible to near IR spectral range
- 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHs compliant
Applications:
- Smoke detection
- Barcode scanning
- Light meters
- Pulse oximeters
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Active area = 1.6 mm2
Short Circuit Current = Minimum 30 µA at 100 fc, 2850 K
Dark Current = Maximum 7 nA at 50 V Reverse Bias
Junction Capacitance = Maximum 6 pF at 15 V Reverse Bias
Breakdown Voltage = Minimum 50 V
Spectral Range = 400 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Angular Response = ±15 Degrees at 50 % Response
Active area = 1.6 mm2
Short Circuit Current = Minimum 30 µA at 100 fc, 2850 K
Dark Current = Maximum 7 nA at 50 V Reverse Bias
Junction Capacitance = Maximum 6 pF at 15 V Reverse Bias
Breakdown Voltage = Minimum 50 V
Spectral Range = 400 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Angular Response = ±15 Degrees at 50 % Response