Fast-Response Si Photodiodes
Our Fast-Response Silicon Photodiodes offer low-junction capacitance to achieve fast response times. They can be operated under reverse bias to decrease the capacitance and further increase the speed of response or in photovoltaic mode in applications where speed of response is not critical. With excellent response in the IR-spectral range, these devices are well-matched to Excelitas' Infrared LED VTE Series.
Part Number
VTP1232FH
VTP1232FH - Si PD, T1 3/4 Flat, 2.326 mm2
The VTP1232FH is a silicon photodiode in a clear end-looking T1¾ flat package. This photodiode provides an enhanced response in the visible and near IR spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.
Part Number
VTP1232H
VTP1232H - Si PD, T1 3/4 Lensed, 2.326 mm2
The VTP1232H is a silicon photodiode in a clear end-looking T1¾ lensed package. The VTP1232H Si photodiode provides an enhanced response in the visible and near IR spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.
Part Number
VTP3310LAH
VTP3310LAH - Si PD, T1 Lensed, 0.684 mm2
The VTP3310LAH is a silicon photodiode in a clear end-looking long T1 lensed package. This photodiode provides an enhanced response in the visible and near IR-spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.
Part Number
VTP4085H
VTP4085H - Si PD, Ceramic, 21mm2
The VTP4085H is a silicon photodiode on a ceramic substrate coated with epoxy which produces a fast response and low dark current .
Part Number
VTP8440H
VTP8440H - Si PD, Ceramic, 5.16 mm2
The VTP8440H is a silicon photodiode on 8 mm ceramic substrate coated with epoxy. With a wide field-of-view, this photodiode produces a fast response and a low dark current.