VTP4085SH - Si PD, Ceramic, 21 mm2, Low Id
The VTP4085SH is a silicon photodiode on ceramic substrate coated with epoxy which produces a fast response and low dark current.
This fast-response silicon photodiode provides a 21mm2 active area and spectral response between 400 nm and 1100 nm. Our series of photodiodes are designed for low-junction capacitance to achieve faster response time. They are suitable for operation under reverse bias, which increases the speed of response, but can also be used in photovoltaic mode. These devices have excellent response in the IR region and are well matched to IR LEDs.
Features & Benefits:
- Visible to IR spectral range
- Peak wavelength: 925nm
- Large active area 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- RoHS compliant
Applications:
- Smoke detection
- Barcode scanning
- Light meters
- Pulse oximeters
Active area = 21 mm2
Short Circuit Current = Minimum 200 µA at 100 fc, 2850 K
Short Circuit Current = Minimum 11.4 µA at 100 µW/cm2, 940 nm
Dark Current = Maximum 50 nA at 100 mV Reverse Bias
Junction Capacitance = Typical 0.35 nF at 0 V Bias
Spectral Range = 400 nm to 1100 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Active area = 21 mm2
Short Circuit Current = Minimum 200 µA at 100 fc, 2850 K
Short Circuit Current = Minimum 11.4 µA at 100 µW/cm2, 940 nm
Dark Current = Maximum 50 nA at 100 mV Reverse Bias
Junction Capacitance = Typical 0.35 nF at 0 V Bias
Spectral Range = 400 nm to 1100 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W