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PART/ VTP1188SH

VTP1188SH - Si PD, Lensed Ceramic, 11 mm2

The VTP1188SH is a silicon photodiode in a lensed ceramic package. This photodiode provides an enhanced response in the visible and near IR spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.

This fast-response silicon photodiode provides a 11 mm2 active area and is designed for a spectral response between 400 nm and 1100 nm.

Our Series of fast-response silicon photodiodes are designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode in applications where speed of response is not critical.

These devices have excellent response in the IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.

Features & Benefits:

  • Visible to near IR spectral range
  • 1 to 2% linearity over 7 to 9 decades
  • Low dark current
  • High shunt resistance
  • Low capacitance
  • Fast response
  • High reverse voltage rating
  • RoHS compliant

Applications:

  • Smoke detection
  • Barcode scanning
  • Light meters
  • Pulse oximeters

Active area = 11 mm2

Short Circuit Current = Typical 200 µA at 100 fc, 2850 K

Short Circuit Current = Minimum 13 µA at 100 µW/cm2, 880 nm 

Dark Current = Maximum 30 nA at 10 mV Reverse Bias

Junction Capacitance = Maximum 0.3 nF at 0 V Bias

Spectral Range = 400 nm to 1100 nm

Peak Spectral Response = 925 nm

Sensitivity at peak Wavelength = Typical 0.55 A/W

Active area = 11 mm2

Short Circuit Current = Typical 200 µA at 100 fc, 2850 K

Short Circuit Current = Minimum 13 µA at 100 µW/cm2, 880 nm 

Dark Current = Maximum 30 nA at 10 mV Reverse Bias

Junction Capacitance = Maximum 0.3 nF at 0 V Bias

Spectral Range = 400 nm to 1100 nm

Peak Spectral Response = 925 nm

Sensitivity at peak Wavelength = Typical 0.55 A/W