VTP8350H - Si PD, Ceramic, 7.45 mm2
The VTP8350H is a silicon photodiode on ceramic substrate coated with epoxy. With a wide field-of-view, this photodiode produces a fast response and low dark current.
This fast-response silicon photodiode provides a 7.45 mm2 active area and spectral response between 400 nm and 1150 nm. Our series of fast-response photodiodes are designed for low junction capacitance to achieve faster response time. They are suitable for operation under reverse bias, which increases the speed of response, but can also be used in photovoltaic mode. These photodiodes have excellent response in the IR region and are well matched to IR LEDs.
Features & Benefits:
- Visible to IR spectral range
- Peak wavelength: 925nm
- Medium size active area
- 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- RoHS compliant
Applications:
- Smoke detection
- Barcode scanning
- Light meters
- Pulse oximeters
Active area = 7.45 mm2Â active area
Short Circuit Current = Minimum 65 µA at 100 fc, 2850 K
Responsivity = Typical 0.06 A/(W/cm2), 940 nm
Dark Current = Maximum 30 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 50 pF at 3 V Reverse Bias
Spectral Range = 400 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at Peak Wavelength = Typical 0.55 A/W
Angular Response = ±60 Degrees at 50 % Response
Active area = 7.45 mm2Â active area
Short Circuit Current = Minimum 65 µA at 100 fc, 2850 K
Responsivity = Typical 0.06 A/(W/cm2), 940 nm
Dark Current = Maximum 30 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 50 pF at 3 V Reverse Bias
Spectral Range = 400 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at Peak Wavelength = Typical 0.55 A/W
Angular Response = ±60 Degrees at 50 % Response