VTP1232H - Si PD, T1 3/4 Lensed, 2.326 mm2
The VTP1232H is a silicon photodiode in a clear end-looking T1¾ lensed package. The VTP1232H Si photodiode provides an enhanced response in the visible and near IR spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.
This fast-response silicon photodiode provodes a 2.326 mm2 active area and is designed for spectral response between 400 nm and 1100 nm.
Our series of fast-response photodiodes are designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode if speed of response is not critical for the application in which they are being used.
These devices have excellent response in the IR-spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- Visible to near IR-spectral range
- 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHS compliant
Applications:
- Smoke detection
- Barcode scanning
- Light meters
- Pulse oximeters
Active area = 2.326 mm2
Short Circuit Current = Minimum 100 µA at 100 fc, 2850 K
Responsivity = Minimum 0.06 A/(W/cm2), 880 nm
Dark Current = Maximum 25 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 0.3 nF at 0 V Bias
Spectral Range = 400 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.60 A/W
Angular Response = ±20 Degrees at 50 % Response
Active area = 2.326 mm2
Short Circuit Current = Minimum 100 µA at 100 fc, 2850 K
Responsivity = Minimum 0.06 A/(W/cm2), 880 nm
Dark Current = Maximum 25 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 0.3 nF at 0 V Bias
Spectral Range = 400 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.60 A/W
Angular Response = ±20 Degrees at 50 % Response