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C30807EH
C30807EH - Si PIN Photodiode - 1.0mm
The C30807EH is a high quality N-type Silicon PIN Photodiode with a 1.0 mm active diameter chip in a hermetically-sealed TO-18 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².
Features & Benefits:
- High responsivity
- Fast response time
- Low operating voltage
- Low capacitance
- Hermetically sealed packages
- RoHS Compliant
Applications:
- Laser detection systems
- Photometry
- Data transmission
- Instrumentation
- High speed switching
Breakdown Voltage: >100 V
Capacitance: 2.5 pF
Dark Current: 10nA/<50 nA
Noise Current: 60fW/√Hz
Peak Wavelength: 900 nm
Responsivity: 0.6 A/W, at 900nm
Rise/Fall Time: <5/<10 ns
Breakdown Voltage: >100 V
Capacitance: 2.5 pF
Dark Current: 10nA/<50 nA
Noise Current: 60fW/√Hz
Peak Wavelength: 900 nm
Responsivity: 0.6 A/W, at 900nm
Rise/Fall Time: <5/<10 ns