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PART/ C30807EH

C30807EH - Si PIN Photodiode - 1.0mm

The C30807EH is a high quality N-type Silicon PIN Photodiode with a 1.0 mm active diameter chip in a hermetically-sealed TO-18 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².

Features & Benefits:

  • High responsivity
  • Fast response time
  • Low operating voltage
  • Low capacitance
  • Hermetically sealed packages
  • RoHS Compliant

Applications:

  • Laser detection systems
  • Photometry
  • Data transmission
  • Instrumentation
  • High speed switching

Breakdown Voltage >100 V
Capacitance 2.5 pF
Dark Current 10nA/<50 nA
Noise Current 60fW/√Hz
Peak Wavelength 900 nm
Responsivity 0.6 A/W, at 900nm
Rise/Fall Time <5/<10 ns
Excelitas Silicon PIN Photodiodes
Breakdown Voltage >100 V
Capacitance 2.5 pF
Dark Current 10nA/<50 nA
Noise Current 60fW/√Hz
Peak Wavelength 900 nm
Responsivity 0.6 A/W, at 900nm
Rise/Fall Time <5/<10 ns
Excelitas Silicon PIN Photodiodes
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