C30817EH - Si APD, 0.8mm, TO-5 Low-Profile
The C30817EH Silicon Avalanche Photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.
The C30817 is hermetically-sealed behind a flat glass window in a modified low-profile TO-5 package.
Key Features:
- High-quantum efficiency
- 85% typical at 900 nm
- 18% typical at 1060 nm
- Spectral response range – 400 to 1100 nm
- Fast time response
- Rise time and fall time typically 2 ns
- Wide operating temperature range
Applications:
- Laser detection
- Ranging
- Optical communications
- High-speed switching
- Transit-time measurements
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
Breakdown Voltage: 375 V
Capacitance: 2 pF
Dark Current: 50 nA
Gain: 120
Noise Current: 1 pA/√Hz
Package: TO-5, flat window
Responsivity:
- 75 A/W at 900 nm
- 18 A/W at 1060 nm
Rise/Fall Time: 2 ns
Temperature Coefficient: 0.7 V/°C
Wavelength: 400-1100 nm
Active Area: 0.5 mm²
Active Diameter: 0.8 mm
Breakdown Voltage: 375 V
Capacitance: 2 pF
Dark Current: 50 nA
Gain: 120
Noise Current: 1 pA/√Hz
Package: TO-5, flat window
Responsivity:
- 75 A/W at 900 nm
- 18 A/W at 1060 nm
Rise/Fall Time: 2 ns
Temperature Coefficient: 0.7 V/°C
Wavelength: 400-1100 nm