PART/
C30822EH
C30822EH - Si PIN Photodiode - 5mm
The C30822EH is a Silicon PIN Photodiode with a 5.0 mm active diameter chip in a hermetically-sealed TO-8 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².
Features & Benefits:
- Silicon (Si) PIN photodiode
- TO-8 hermetically-sealed package
- 5.0 mm active diameter chip
- Anti-reflection coated to enhance responsivity at 900 nm
- High responsivity
- Fast response time
- Low operating voltage
- Low capacitance
- Hermetically sealed packages
- RoHS Compliant
Applications:
- Laser detection systems
- Photometry
- Data transmission
- Instrumentation
- High speed switching
Breakdown Voltage: >100 V
Capacitance: 12 pF
Dark Current: 50nA/<250 nA
Noise Current: 130 fW/√Hz
Peak Wavelength: 900 nm
Responsivity: 0.6 A/W, at 900 nm
Rise/Fall Time: <20/<20 ns
Breakdown Voltage: >100 V
Capacitance: 12 pF
Dark Current: 50nA/<250 nA
Noise Current: 130 fW/√Hz
Peak Wavelength: 900 nm
Responsivity: 0.6 A/W, at 900 nm
Rise/Fall Time: <20/<20 ns