VTB5051BH - Si PD, TO-5, 14.8mm2, IR Filter
The VTB5051BH is a silicon photodiode in a hermetic TO-5 flat window package. With a built-in IR rejection filter to limit the response into the visible portion of the spectrum, this photodiode exhibits a very high shunt resistance and a low dark current.
The VTB5051BH Silicon Photodiode provides a 14.8 mm2 active area with a built-in IR rejection filter to limit the response into the visible portion of the spectrum.
This photodiode is primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. It is designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- Visible spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
Applications:
- Ambient light sensing
- Light meters
- Flame monitoring
- Photometry
Active area = 14.8 mm2
Short Circuit Current = Minimum 8 µA at 100 fc, 2850 K
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
Spectral Range = 330 nm to 720 nm
Peak Spectral Response = 580 nm
Sensitivity at peak Wavelength = Typical 0.29 A/W
Angular Response = ±50 Degrees at 50% Response
Active area = 14.8 mm2
Short Circuit Current = Minimum 8 µA at 100 fc, 2850 K
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
Spectral Range = 330 nm to 720 nm
Peak Spectral Response = 580 nm
Sensitivity at peak Wavelength = Typical 0.29 A/W
Angular Response = ±50 Degrees at 50% Response