PART/ VTB8441H
VTB8441H - Si PD, 8mm Ceramic, 5.16 mm2, Low Id
The VTB8441H is a blue-enhanced silicon photodiode in a 8 mm recessed ceramic package protected with a clear epoxy layer. This photodiode provides an enhanced response in the blue spectral range, as well as exhibits a very high shunt resistance and a low dark current.
The VTB8441H Blue-Enhanced Silicon Photodiode provides a 5.16 mm2 active area and a spectral response between 320 and 1100 nm. This series of P on N Silicon planar photodiodes has been designed for optimum response through the visible part of the spectrum.
Our blue-enhanced silicon photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
Applications:
- UV and blue light sensing
- Light meters
- Flame monitoring
- Photometry
Active area = 5.16 mm2
Short Circuit Current = Minimum 35 µA at 100 fc, 2850 K
Dark Current = Maximum 100 pA at 2 V Reverse Bias
Junction Capacitance = Typical 1.0 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±50 Degrees at 50% Response
Active area = 5.16 mm2
Short Circuit Current = Minimum 35 µA at 100 fc, 2850 K
Dark Current = Maximum 100 pA at 2 V Reverse Bias
Junction Capacitance = Typical 1.0 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±50 Degrees at 50% Response