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PART/ VTD31AAH

VTD31AAH - Si PD, CLD31AA equivalent, Ceramic, 16.73mm2

The VTD31AAH is a silicon photodiode on ceramic substrate coated with clear epoxy, and a CLD31AA industry equivalent. This photodiode provides a low dark current, fast response and wide field-of-view.

This silicon photodiode provides a 16.73 mm2 active area designed for spectral response between 400 nm and 1150 nm.

Our VTD Series are photodiodes which have been used in many applications as replacements for competitive devices. These photodiodes exhibit low dark current under reverse bias and fast speed of response.

Features & Benefits:

  • Visible to IR spectral range
  • Peak wavelength: 925 nm
  • Medium size active area
  • Low dark current
  • Fast response
  • RoHs compliant

Applications:

Pulse oximetry, Coin counters, Automotive

Active area = 16.73 mm2 active area

Short Circuit Current = Minimum 150 µA at 5 mW/cm2, 2850 K

Dark Current = Maximum 50 nA at 15 V Reverse Bias

Junction Capacitance = Maximum 500 pF at 0 V Bias

Spectral Range = 400 nm to 1150 nm

Peak Spectral Response = 860 nm

Sensitivity at peak Wavelength = Typical 0.55 A/W

Angular Response = ±60 Degrees at 50 % Response

Active area = 16.73 mm2 active area

Short Circuit Current = Minimum 150 µA at 5 mW/cm2, 2850 K

Dark Current = Maximum 50 nA at 15 V Reverse Bias

Junction Capacitance = Maximum 500 pF at 0 V Bias

Spectral Range = 400 nm to 1150 nm

Peak Spectral Response = 860 nm

Sensitivity at peak Wavelength = Typical 0.55 A/W

Angular Response = ±60 Degrees at 50 % Response

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