VTH3020 Large-area Silicon Photodiode, Chip-on-Board Detector
The Excelitas VTH3020 is an advanced Chip-on-Board (CoB) large-area 100 mm2 Silicon Photodiode that delivers exceptional performance. This state-of-the-art photodiode is optimized for alpha particle detection, making it an ideal choice for applications such as radon gas monitoring. Its chip-on-board design simplifies the reflow assembly process. Furthermore, its innovative design significantly enhances responsivity to alpha particles, effectively eliminating the absorption issues commonly associated with window assemblies. Additionally, its large area maximizes the collection efficiency for low-level radiation, ensuring precise and accurate detection.
The Excelitas VTH3020 photodiodes are designed in chip form for optimal detection of alpha particles, particularly in applications such as radon gas detection. These low-capacitance silicon photodiodes feature a robust chip design that ensures high responsivity to the radiation of interest. They are available in two sizes, with active areas of 5x5 mm and 10x10 mm, to maximize the detection of low-level radiation. Additionally, these photodiodes have a spectral response range of 400 nm to 1100 nm.
| Â | Â |
| Active area | 100 mm² |
| Dark Current | Maximum 10 nA at 20 V Reverse Bias |
| Junction Capacitance | Maximum 120 pF at 20 V Reverse Bias |
| Spectral Range | 400 nm to 1100 nm |
| Peak Spectral Response | 925 nm |
| Sensitivity at peak Wavelength | Typical 0.70 A/W |
| Breakdown voltage | > 100 V |
Â
- Advanced CoB silicon photodiode design for enhanced integration and performance
- 10 mm x 10 mm active area for maximum radiation collection
- Reflow solderable for streamlined assembly processes
- Low dark current and noise, ensuring high signal integrity
- High breakdown voltage for robust operation
- Low capacitance, optimizing performance for sensitive detection
- RoHS Compliance
- Radon detection
- Alpha particle detection
| Â | Â |
| Active area | 100 mm² |
| Dark Current | Maximum 10 nA at 20 V Reverse Bias |
| Junction Capacitance | Maximum 120 pF at 20 V Reverse Bias |
| Spectral Range | 400 nm to 1100 nm |
| Peak Spectral Response | 925 nm |
| Sensitivity at peak Wavelength | Typical 0.70 A/W |
| Breakdown voltage | > 100 V |
Â
- Advanced CoB silicon photodiode design for enhanced integration and performance
- 10 mm x 10 mm active area for maximum radiation collection
- Reflow solderable for streamlined assembly processes
- Low dark current and noise, ensuring high signal integrity
- High breakdown voltage for robust operation
- Low capacitance, optimizing performance for sensitive detection
- RoHS Compliance
- Radon detection
- Alpha particle detection