InGaAs PIN Photodiodes

The C30617ECERH is a high-speed InGaAs PIN Photodiode with 100 µm diameter of active area on a rectangular ceramic carrier. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity high linearity and uniformity within two percent across the detector active area.

The C30618ECERH is a high-speed InGaAs PIN Photodiode with 350 µm diameter of active area on a rectangular ceramic carrier. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30617BH is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in TO-18 ball lens package. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30617BFCH is a high-speed InGaAs PIN Photodiode with a 100µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30618BFCH is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within 2% across the detector active area.

The C30618GH is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30619GH is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

The C30641GH is a large-area InGaAs PIN Photodiode with a 1.0 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

The C30642GH is a large-area InGaAs PIN Photodiode with a 2.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

The C30665GH is a large-area InGaAs PIN Photodiode with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within 2% across the detector active area.

The C30723GH is a large-area InGaAs PIN Photodiode with a 5.0 mm active diameter chip in a TO-8 package and flat glass window. This photodidoe provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

The C30617L-100 is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in a ceramic SMD package with window. This photodiode provides high quantum efficiency from 960 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30618L-350 is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in a ceramic SMD package with window. This photodiode provides high quantum efficiency from 960 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30619GH-LC is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.

The C30641GH-LC is a large-area InGaAs PIN Photodiode with a 1.0 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.

The C30642GH-LC is a large-area InGaAs PIN Photodiode with a 2.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.

The C30665GH-LC is a large-area InGaAs PIN Photodiode with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.