C30618ECERH - InGaAs PIN, 350um, Ceramic Carrier
The C30618ECERH is a high-speed InGaAs PIN Photodiode with 350 µm diameter of active area on a rectangular ceramic carrier. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
Features & Benefits:
- High-speed InGaAs PIN photodiode
- Standard package: rectangular ceramic
- 350 µm active diameter
- High responsivity at 1300 and 1550 nm
- Low capacitance for high bandwidths (to 750 MHz)
Applications:
- Telecommunications
- Instrumentation
- Data transmission
- High speed switching
- Data links and fiber optic communications
Breakdown Voltage: 80 V
Operating voltage: 5V
Capacitance: 3.7 pF
Dark Current: 1 nA
Noise Current: 0.02 pA/√Hz
Package: Ceramic carrier
High responsivity at 1300 and 1550 nm
Responsivity: 0.90 A/W
Rise/Fall Time: < 1ps
Breakdown Voltage: 80 V
Operating voltage: 5V
Capacitance: 3.7 pF
Dark Current: 1 nA
Noise Current: 0.02 pA/√Hz
Package: Ceramic carrier
High responsivity at 1300 and 1550 nm
Responsivity: 0.90 A/W
Rise/Fall Time: < 1ps