Excelitas C30645 InGaAs APD in a Ceramic Carrier and Small Aperture
PART/ C30645EH

C30645EH - InGaAs APD, 80um, TO-18 Low-Profile

The C30645EH Large-Area InGaAs Avalanche Photodiode provides an 80 µm active diameter in hermetic TO-18 package and small aperture silicon window.

The Excelitas C30645EH is optimized for the wavelength of 1550 nm and suitable for use in eye-safe laser range finding systems.

Features & Benefits:

  • Large-area InGaAs APD 80 µm diameter
  • Hermetic TO-18 package; Small aperture silicon
  • Spectral response 1100 to 1700 nm
  • Low noise and dark current
  • High gain and quantum efficiency
  • Bandwidth over 1000 MHz
  • Custom modifications available to meet specific needs

Applications:

  • Laser-range finding, scanning and video imaging
  • Optical and free space communication
  • Scanning and video imaging
  • Optical and free space communication spectrophotometers and reflectometry

Active Diameter: 80 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: TO-18
Window aperture: Small 0.8 mm
Window Type: Silicon blocks visible light <1100 nm

Active Diameter: 80 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: TO-18
Window aperture: Small 0.8 mm
Window Type: Silicon blocks visible light <1100 nm

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