Excelitas C30645 InGaAs APD in a Ceramic Carrier and Small Aperture
PART/ C30645EH

C30645EH - InGaAs APD, 80um, TO-18 Low-Profile

The C30645EH Large-Area InGaAs Avalanche Photodiode provides an 80 µm active diameter in hermetic TO-18 package and small aperture silicon window.

The Excelitas C30645EH is optimized for the wavelength of 1550 nm and suitable for use in eye-safe laser range finding systems.

Features & Benefits:

  • Large-area InGaAs APD 80 µm diameter
  • Hermetic TO-18 package; Small aperture silicon
  • Spectral response 1100 to 1700 nm
  • Low noise and dark current
  • High gain and quantum efficiency
  • Bandwidth over 1000 MHz
  • Custom modifications available to meet specific needs

Applications:

  • Laser-range finding, scanning and video imaging
  • Optical and free space communication
  • Scanning and video imaging
  • Optical and free space communication spectrophotometers and reflectometry

Active Diameter: 80 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: TO-18
Window aperture: Small 0.8 mm
Window Type: Silicon blocks visible light <1100 nm

Active Diameter: 80 µm
Breakdown Voltage: 40-70 V
Temperature Coefficient: 0.14 V/°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
Gain: 20
Package: TO-18
Window aperture: Small 0.8 mm
Window Type: Silicon blocks visible light <1100 nm

Download asset:
To download this item, please complete the form below.
NOTE: If you have disabled our targeting cookies, you will not be able to access our downloads. To update your cookie preferences, please click here to review and enable cookies.
CAPTCHA
This question is for testing whether or not you are a human visitor and to prevent automated spam submissions.
Close