C30662 InGaAs Avalanche Photodiodes Series
The C30662 Series features a variety of large-area InGaAs Avalanche Photodiodes (APDs) with a 200 µm active area. Excelitas InGaAs APDs offer high quantum efficiency (QE), robust responsivity, and low noise across the spectral range of 1000 nm to 1700 nm. These devices are available in a hermetically sealed TO-18 package or on a ceramic carrier. The ceramic surface mount package facilitates easy integration into high-volume applications.
The Excelitas C30662 Series offers high bandwidth and low noise, enabling OEMs and system manufacturers to achieve advanced noise specifications with optimal Signal-to-Noise Ratios (SNRs). The newly enhanced low-noise option improves the range and performance of LiDAR and eye-safe range-finding systems while maintaining the same laser output power. Additionally, coherent Optical Time Domain Reflectometry (OTDR) and fiber sensing applications, such as Distributed Temperature Sensing (DTS) and Distributed Acoustic Sensing (DAS), benefit from improved sensitivity over longer ranges when detecting Raman-scattered signals.
| Series Model # | Package Type | Window Material | Window Aperture | Comments |
| C30662ECERH | Ceramic Carrier | N/A | N/A | |
| C30662ECERH-1 | ΔV > 4 V | |||
| C30662EH | TO-18, 2 pin | Glass1 | Large2 | |
| C30662EH-1 | ΔV > 4 V | |||
| C30662EH-2 | TO-46, 3 pin | 3. ground pin | ||
| C30662EH-137 | TO-18, 2 pin | Small | low noise, ΔV > 4 V | |
| C30662EH-3 | ||||
| C30662EH-5 | Silicon | Small2 | ||
| C30662EH-7 | Glass1 | Large2 | low noise | |
| C30662EH-27 | TO-46, 3 pin | low noise, 3. ground pin | ||
| C30662L-200 | SMD | N/A | ||
| C30662L-200-1 | Silicon | |||
| C30662L-200-7 | Glass1 | low noise | ||
| C30662L-200-17 | Silicon |
Note 1:Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.
| Parameter | Symbol | Minimum | Typical | Maximum | Units | |
| Rise Time/Fall Time | tr/tf | 0.4 | ns | |||
| Bandwidth | f3dB | 600 | 850 | MHz | ||
| Capacitance | Standard | C | 2.5 | pF | ||
| SMD | C | 2.7 | ||||
| Dark Current | Standard | iD | 13 | 35 | nA | |
| Low Noise | iD | 7.5 | 15 | |||
| Dark Noise | Standard | iN | 0.45 | 1 | pA/√(Hz) | |
| Low Noise | iN | 0.35 | 0.5 | |||
| Noise Equivalent Power | Standard | NEP | 48 | 106 | fW/√(Hz) | |
| Noise Equivalent Power | Low Noise | NEP | 37 | 53 | ||
| Operating Gain | M | 10 | 20 | |||
| Operating Point from Breakdown | ΔV | 4 | V | |||
| Parameter | Symbol | Minimum | Typical | Maximum | Units |
| Breakdown Voltage | VBD | 45 | 50 | 70 | V |
| Spectral Range | Δλ | 1000 | 1700 | nm | |
| Quantum Efficiency | QE | 75 | % | ||
| Responsivity @1550 nm | R | 9.3 | A/W | ||
| Temperature Coefficient of VBD | ΔV/ΔT | 0.14 | 0.2 | V/°C |
| Series Model # | Package Type | Window Material | Window Aperture | Comments |
| C30662ECERH | Ceramic Carrier | N/A | N/A | |
| C30662ECERH-1 | ΔV > 4 V | |||
| C30662EH | TO-18, 2 pin | Glass1 | Large2 | |
| C30662EH-1 | ΔV > 4 V | |||
| C30662EH-2 | TO-46, 3 pin | 3. ground pin | ||
| C30662EH-137 | TO-18, 2 pin | Small | low noise, ΔV > 4 V | |
| C30662EH-3 | ||||
| C30662EH-5 | Silicon | Small2 | ||
| C30662EH-7 | Glass1 | Large2 | low noise | |
| C30662EH-27 | TO-46, 3 pin | low noise, 3. ground pin | ||
| C30662L-200 | SMD | N/A | ||
| C30662L-200-1 | Silicon | |||
| C30662L-200-7 | Glass1 | low noise | ||
| C30662L-200-17 | Silicon |
Note 1:Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.
| Parameter | Symbol | Minimum | Typical | Maximum | Units | |
| Rise Time/Fall Time | tr/tf | 0.4 | ns | |||
| Bandwidth | f3dB | 600 | 850 | MHz | ||
| Capacitance | Standard | C | 2.5 | pF | ||
| SMD | C | 2.7 | ||||
| Dark Current | Standard | iD | 13 | 35 | nA | |
| Low Noise | iD | 7.5 | 15 | |||
| Dark Noise | Standard | iN | 0.45 | 1 | pA/√(Hz) | |
| Low Noise | iN | 0.35 | 0.5 | |||
| Noise Equivalent Power | Standard | NEP | 48 | 106 | fW/√(Hz) | |
| Noise Equivalent Power | Low Noise | NEP | 37 | 53 | ||
| Operating Gain | M | 10 | 20 | |||
| Operating Point from Breakdown | ΔV | 4 | V | |||
| Parameter | Symbol | Minimum | Typical | Maximum | Units |
| Breakdown Voltage | VBD | 45 | 50 | 70 | V |
| Spectral Range | Δλ | 1000 | 1700 | nm | |
| Quantum Efficiency | QE | 75 | % | ||
| Responsivity @1550 nm | R | 9.3 | A/W | ||
| Temperature Coefficient of VBD | ΔV/ΔT | 0.14 | 0.2 | V/°C |