C30737LH-300-70N - Si APD, 300um, LCC
The C30737LH-300-70N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 300 µm and enhanced 800 nm response in a leadless ceramic carrier (LCC).
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise time at all wavelengths with a frequency response above 700 MHz
- Active diameter of 300 μm and optimized for 800 nm response
- Leadless ceramic carrier option "LH"
Applications:
- Laser-range finding
- Distance meters
- Area and security scanning
- Applications requiring a low-cost, high-performing detector
Active Diameter: 300μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 110-165
Temperature Coefficient of Vop for constant M: 0.6V/°C
Gain: 100 @ 800 nm
Responsivity: 55A/W at 800 nm
Dark Current: 1 nA
Noise Current: 0.2 pA/√Hz
Capacitance: 0.7 pF
Cut-off frequency: 700 MHz
Storage Temp: -40°C to +100°C
Operating Temp: -20°C to +60°C
Package: 3x3mm glass window Leadless Ceramic Carrier (LCC)
Window: standard window
Active Diameter: 300μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 110-165
Temperature Coefficient of Vop for constant M: 0.6V/°C
Gain: 100 @ 800 nm
Responsivity: 55A/W at 800 nm
Dark Current: 1 nA
Noise Current: 0.2 pA/√Hz
Capacitance: 0.7 pF
Cut-off frequency: 700 MHz
Storage Temp: -40°C to +100°C
Operating Temp: -20°C to +60°C
Package: 3x3mm glass window Leadless Ceramic Carrier (LCC)
Window: standard window