PART/ C30737LH-500-81N
C30737LH-500-81N - Si APD, 500um, LCC, 635nm filter, 800nm enhanced
The C30737LH-500-81N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500 µm with enhanced 800 nm response and a 635 nm optical bandpass in a leadless ceramic carrier (LCC).
Key Features:
- High responsivity filtered at 635nm
- Low noise and extremely fast rise time at all wavelengths with a frequency response above 1.3 GHz
- Active diameter of 500μm and optimized for 800 nm
- Optical bandpass filter at 635nm
- Leadless ceramic carrier option "LH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
- Active Diameter: 500μm
- Peak Sensitivity Wavelength: 635 nm
- Breakdown Voltage Vbd: 120-210 (binning available)
- Temperature Coefficient of Vop for Constant M: 0.5V/°C
- Gain: 100 @ 635 nm
- Responsivity: 35A/W at 900 nm
- Dark Current Id: 0.1 < 1.0 nA
- Noise Current: 0.1 pA/√Hz
- Capacitance: 2 pF
- Rise/Fall Time: 0.3 ns R load = 50Ω
- Cut-off Frequency: 1.3 GHz
- Storage Temp: -50°C to +100°C
- Operating Temp: -40°C to +85°C
- Package: 3x3mm glass window, leadless ceramic carrier (LCC)
- Window: 635 nm filter
- Active Diameter: 500μm
- Peak Sensitivity Wavelength: 635 nm
- Breakdown Voltage Vbd: 120-210 (binning available)
- Temperature Coefficient of Vop for Constant M: 0.5V/°C
- Gain: 100 @ 635 nm
- Responsivity: 35A/W at 900 nm
- Dark Current Id: 0.1 < 1.0 nA
- Noise Current: 0.1 pA/√Hz
- Capacitance: 2 pF
- Rise/Fall Time: 0.3 ns R load = 50Ω
- Cut-off Frequency: 1.3 GHz
- Storage Temp: -50°C to +100°C
- Operating Temp: -40°C to +85°C
- Package: 3x3mm glass window, leadless ceramic carrier (LCC)
- Window: 635 nm filter