Excelitas C39737LH Silicon APD in LCC package
PART/ C30737LH-500-81N

C30737LH-500-81N - Si APD, 500um, LCC, 635nm filter, 800nm enhanced

The C30737LH-500-81N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500 µm with enhanced 800 nm response and a 635 nm optical bandpass in a leadless ceramic carrier (LCC).

Key Features:

  • High responsivity filtered at 635nm
  • Low noise and extremely fast rise time at all wavelengths with a frequency response above 1.3 GHz
  • Active diameter of 500μm and optimized for 800 nm
  • Optical bandpass filter at 635nm
  • Leadless ceramic carrier option "LH"

Applications:

  • LiDAR
  • Laser-range finding
  • Security scanning
  • Applications requiring a low-cost, high-performing detector

Active Diameter: 500μm
Peak Sensitivity Wavelength: 635 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for Constant M: 0.5V/°C
Gain: 100 @ 635 nm
Responsivity: 35A/W at 900 nm
Dark Current Id: 0.1 < 1.0 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 2 pF
Rise/Fall Time: 0.3 ns R load = 50Ω
Cut-off Frequency: 1.3 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 3x3mm glass window, leadless ceramic carrier (LCC)
Window: 635 nm filter

Active Diameter: 500μm
Peak Sensitivity Wavelength: 635 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for Constant M: 0.5V/°C
Gain: 100 @ 635 nm
Responsivity: 35A/W at 900 nm
Dark Current Id: 0.1 < 1.0 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 2 pF
Rise/Fall Time: 0.3 ns R load = 50Ω
Cut-off Frequency: 1.3 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 3x3mm glass window, leadless ceramic carrier (LCC)
Window: 635 nm filter

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