Excelitas C30737MH-230-80N Silicon Avalanche Photodiode (Si APD)
PART/ C30737MH-230-80N

C30737MH-230-80N - Si APD, 230um, LLC, 800nm enhanced

The C30737MH-230-80N Silicon Avalanche Photodiode (Si APD) offers enhanced 800 nm response with an active diameter of 230µm in a leadless laminated carrier (LLC).

Key Features:

  • High responsivity between 500 and 1000 nm
  • Low noise and extremely fast rise times at all wavelengths with a frequency response above 1.5 GHz
  • Active diameter of 230μm and optimized for 800nm peak sensitivity.
  • Leadless laminated carrier option "MH"

 

Applications:

 

  • LiDAR
  • Laser-range finding
  • Security scanning
  • Applications requiring a low-cost, high-performing detector

 

Active Diameter: 230μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for Constant M: 0.5 V/°C
Gain: 100 @800nm
Responsivity: 50 A/W at 800 nm
Dark Current Id: 0.05 <0.5 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.2 ns R load = 50Ω
Cut-off Frequency: 1.5 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 2x1.75mm Top-looking FR4 epoxy, leadless laminated carrier (LLC)

 

Active Diameter: 230μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for Constant M: 0.5 V/°C
Gain: 100 @800nm
Responsivity: 50 A/W at 800 nm
Dark Current Id: 0.05 <0.5 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.2 ns R load = 50Ω
Cut-off Frequency: 1.5 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 2x1.75mm Top-looking FR4 epoxy, leadless laminated carrier (LLC)

 

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