PART/ C30737MH-230-80N
C30737MH-230-80N - Si APD, 230um, LLC, 800nm enhanced
The C30737MH-230-80N Silicon Avalanche Photodiode (Si APD) offers enhanced 800 nm response with an active diameter of 230µm in a leadless laminated carrier (LLC).
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise times at all wavelengths with a frequency response above 1.5 GHz
- Active diameter of 230μm and optimized for 800nm peak sensitivity.
- Leadless laminated carrier option "MH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
| Active Diameter | 230μm |
| Peak Sensitivity Wavelength | 800 nm |
| Breakdown Voltage Vbd | 120-210 (binning available) |
| Temperature Coefficient of Vop for Constant M | 0.5 V/°C |
| Gain | 100 @800nm |
| Responsivity | 50 A/W at 800 nm |
| Dark Current Id | 0.05 <0.5 nA |
| Noise Current | 0.1 pA/√Hz |
| Capacitance | 1 pF |
| Rise/Fall Time | 0.2 ns R load = 50Ω |
| Cut-off Frequency | 1.5 GHz |
| Storage Temp | -50°C to +100°C |
| Operating Temp | -40°C to +85°C |
| Package | 2x1.75mm Top-looking FR4 epoxy, leadless laminated carrier (LLC) |
| Active Diameter | 230μm |
| Peak Sensitivity Wavelength | 800 nm |
| Breakdown Voltage Vbd | 120-210 (binning available) |
| Temperature Coefficient of Vop for Constant M | 0.5 V/°C |
| Gain | 100 @800nm |
| Responsivity | 50 A/W at 800 nm |
| Dark Current Id | 0.05 <0.5 nA |
| Noise Current | 0.1 pA/√Hz |
| Capacitance | 1 pF |
| Rise/Fall Time | 0.2 ns R load = 50Ω |
| Cut-off Frequency | 1.5 GHz |
| Storage Temp | -50°C to +100°C |
| Operating Temp | -40°C to +85°C |
| Package | 2x1.75mm Top-looking FR4 epoxy, leadless laminated carrier (LLC) |