C30737MH-230-90N Silicon Avalanche Photodiode (Si APD)
PART/ C30737MH-230-90N

C30737MH-230-90N - Si APD, 230um, LLC, 900nm enhanced

The C30737MH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230µm and enhanced 900 nm response in a leadless laminated carrier (LLC).

Key Features:

  • High responsivity between 500 and 1000 nm
  • Low noise and extremely fast rise times at all wavelengths with a frequency response above 380 MHz
  • Active diameter of 230μm and optimized for 900nm peak sensitivity
  • Leadless Laminated Carrier option "MH"

Applications:

  • LiDAR
  • Laser range finding
  • Security scanning
  • Applications requiring a low-cost, high-performing detector

Active Diameter: 230μm
Peak Sensitivity Wavelength: 900 nm
Breakdown Voltage Vbd: 180-260 (binning available)
Temperature Coefficient of Vop for Constant M: 1.3 V/°C
Gain: 100 @ 900 nm
Responsivity: 60 A/W at 900 nm
Dark Current Id: 0.05 <0.5 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 0.6 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
Cut-off Frequency: 380 MHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 2x1.75mm Top looking FR4 epoxy, leadless laminated carrier (LLC)

Active Diameter: 230μm
Peak Sensitivity Wavelength: 900 nm
Breakdown Voltage Vbd: 180-260 (binning available)
Temperature Coefficient of Vop for Constant M: 1.3 V/°C
Gain: 100 @ 900 nm
Responsivity: 60 A/W at 900 nm
Dark Current Id: 0.05 <0.5 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 0.6 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
Cut-off Frequency: 380 MHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 2x1.75mm Top looking FR4 epoxy, leadless laminated carrier (LLC)

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