PART/ C30737MH-500-80N
C30737MH-500-80N - Si APD, 500um, LLC, 800nm enhanced
The C30737MH-500-80N Silicon Avalanche Photodiode (APD) provides an active diameter of 500 µm with enhanced 800 nm response in a leadless laminated carrier (LLC).
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise times at all wavelengths with a frequency response above 1.3 GHz
- Active diameter of 500μm and optimized for 800 nm peak sensitivity
- Leadless Laminated Carrier option "MH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
| Active Diameter | 500μm |
| Peak Sensitivity Wavelength | 800 nm |
| Breakdown Voltage Vbd | 120-210 (binning available) |
| Temperature Coefficient of Vop for Constant M | 0.5 V/°C |
| Gain | 100 @800nm |
| Responsivity | 50 A/W at 800 nm |
| Dark Current Id | 0.1 <1 nA |
| Noise Current | 0.1 pA/√Hz |
| Capacitance | 2 pF |
| Rise/Fall Time | 0.3 ns R load = 50Ω |
| Cut-off Frequency | 1.3 GHz |
| Storage Temp | -50°C to +100°C |
| Operating Temp | -40°C to +85°C |
| Package | 2x1.75mm Top looking FR4 epoxy, leadless laminated carrier (LLC) |
| Active Diameter | 500μm |
| Peak Sensitivity Wavelength | 800 nm |
| Breakdown Voltage Vbd | 120-210 (binning available) |
| Temperature Coefficient of Vop for Constant M | 0.5 V/°C |
| Gain | 100 @800nm |
| Responsivity | 50 A/W at 800 nm |
| Dark Current Id | 0.1 <1 nA |
| Noise Current | 0.1 pA/√Hz |
| Capacitance | 2 pF |
| Rise/Fall Time | 0.3 ns R load = 50Ω |
| Cut-off Frequency | 1.3 GHz |
| Storage Temp | -50°C to +100°C |
| Operating Temp | -40°C to +85°C |
| Package | 2x1.75mm Top looking FR4 epoxy, leadless laminated carrier (LLC) |