C30737PH-230-80N - Si APD, 230um, Plastic, 800nm enhanced
The C30737PH-230-80N Silicon Avalanche Photodiode (Si APD) offers an active diameter of 230 µm and enhanced 800 nm response in a plastic T 1¾ through-hole package.
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise time at all wavelengths with a frequency response above 1.5 GHz
- Active diameter of 230 μm and optimized for 800 nm peak sensitivity
- Plastic T1¾ option "PH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
Active Diameter: 230μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for constant M: 0.5 V/°C
Gain: 100 @800nm
Responsivity: 50 A/W at 800 nm
Dark Current Id: 0.05 <0.5 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.2 ns R load = 50Ω
Cut-off frequency: 1.5 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: Plastic T 1-3/4 through hole
Active Diameter: 230μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for constant M: 0.5 V/°C
Gain: 100 @800nm
Responsivity: 50 A/W at 800 nm
Dark Current Id: 0.05 <0.5 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.2 ns R load = 50Ω
Cut-off frequency: 1.5 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: Plastic T 1-3/4 through hole